ECH8310-TL-H 数据手册
其他文档
ECH8310 5 pages
技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi ECH8310-TL-H
- Power Dissipation (Pd): 1.5W
- Total Gate Charge (Qg@Vgs): 28nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 1400pF@10V
- Continuous Drain Current (Id): 9A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@4.5A,10V
- Package: ECH-8
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-ECH
- Package / Case: 8-SMD, Flat Lead
- Base Part Number: ECH8310
- detail: P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH